Semiconductor device with cobalt silicide contacts

ABSTRACT

A semiconductor device that includes cobalt-silicide based contacts is disclosed, as well as a process for making the same. Combinations of alloyed layers of Co—Ti—along with layers of Co—are arranged and heat treated so as to effectuate a silicide reaction on a silicon substrate. The resulting structures have extremely low resistance, and show little line width dependence, thus making them particularly attractive for use in semiconductor devices and processes.

FIELD OF THE INVENTION

This invention relates to a process and system for making a cobaltsilicide material suitable for a semiconductor manufacturing process.

BACKGROUND OF THE INVENTION

Deep submicron (DSM) complementary metal oxide semiconductor (CMOS)circuits make extensive use of interconnects and contacts, and theselatter features must be scaleable as well to ensure smooth migrations tosmaller geometries. Connections to and between active CMOS FET devicesare typically created with so-called “silicide” contacts, in which aportion of a source/drain region is converted during a thermal treatmentinto a metallic low resistance region. Silicidation reactions arewell-known, and state of the art manufacturing processes in the 0.18micron realm typically utilize some form of TiSi2 material as a gate andactive region contact. However TiSi2 has several limitations, includinglinewidth-dependent sheet resistance, low thermal stability, and thefact that titanium can consume an unpredictable amount of silicon duringthe salicidation reaction. Such characteristics severely handicap thepotential for TiSi2 in next generation technologies.

Cobalt silicide (CoSi2) has recently been advocated as a replacement forTiSi2.

One example of a prior art technique disclosing the making and use ofCoSi2 is Goto et. al. “Optimization of Salicide Process for sub 0.1 umCMOS Devices” 1994 Symposium on VLSI Technology Digest of TechnicalPapers, page 119. Cobalt, however, is not without its limitations andproblems as well. For instance, Cobalt is sensitive to oxygen and water.Even using very high purity inert gas for the heat treatment, theresulting cobalt salicide is often oxygen contaminated and a sheetresistance of the cobalt salicide thus increases. To prevent suchoxidization of the cobalt layer, Goto discloses a cobalt salicideprocess using a Ti or TiN cap layer on top of the cobalt layer. Thus, acobalt layer is deposited on a wafer having a top surface comprised of amixture of exposed surfaces, including dielectric (typically sidewalland isolation) surfaces and silicon surfaces (typically gate andsource/drain regions). A Ti or TiN cap layer is deposited on the cobaltlayer without exposing the cobalt layer to air. The wafer is thensubjected to a first anneal. During the first anneal cobalt reacts withsilicon at the surface of the wafer where silicon contacts with cobalt.After the first anneal the wafer is etched in a NH4OH, H2O2, H2Osolution and then with a HCl, H2O2, H2O solution. This two-step wetprocess etches away any metals which are not silicided, that is, Co, Ti,TiN and mixtures thereof. The wafer is then subjected to a secondannealing process. In this process conventional semiconductor processquality N2 can be used during the first annealing. After this firstanneal the Ti or TiN cap prevents residual oxygen from reacting with Co;therefore the resistance of the produced cobalt salicide does notincrease due to an oxygen contamination problem.

As mentioned earlier, to prevent oxidation during silicidation, Ti andTiN are most widely used for capping a Co layer in the Co salicideprocess. The two materials have different strengths and weaknesses inthis regard. For instance, TiN is more stable and does not react muchwith the Co layer. Nonetheless, Ti is more favored at this time, inlarge part because Ti is more reactive toward oxygen, and therefore is apotentially a better cap for preventing oxidation of Co. A Ti cap isalso known to produce a more thermally stable Co salicide film. Thisfact is disclosed in Sohn et al. “Effects of Ti-capping on formation andstability of Co silicide” Journal of The Electrochemical Society 147 (1)page 373-380, 2000.

The use of Ti capping on Co however results in a complicatedsilicidation reaction. As Sohn points out, during the first anneal, Sireacts with Co to form a CoSix layer, consisting of primarily CoSi andCoSi2; Ti diffuses into the Co layer as Co reacts with Si; the Co and Tiform a layer of intermetallic mixture and the Ti layer experiences somenitridation. All these reactions take place in the same time causingcomplex process control consequences. This phenomenon is illustratedgenerally in FIG. 14.

In addition, for a Ti capped Cobalt silicide process, the first annealtemperature typically needs to be higher than for a comparable TiNcapped process. This is a result of the effect of Ti diffusion into theCo layer and the resulting mediation of the silicidation reaction by Ti.In other words, in a Ti-mediated cobalt silicidation process, thepresence of Ti retards the Co—Si reaction so that higher annealtemperatures are needed to complete the total reaction. According toSohn, Ti diffuses into the Si interface and silicide grain boundary,thus stabilizing the final CoSi2 film. Not all deposited Co reacts toform silicide because some Co reacts with the Ti and is converted into aCo—Ti intermetallic mixture layer. Usually in conventional processes, aTi cap of 1 to 2 times the thickness of Co is used. Using such a largeamount of Ti in turn affects the amount of Co that can ultimately reactwith silicon. All of these effects are hard to predict and control, andthis makes the task of process engineering with cobalt silicide quitecomplicated. For instance, the final thickness of Cobalt silicide needsto be precisely controlled for more advanced generation of processbecause of the scaling down of source and drain junction depth.

Thus, although the conventional Co salicide process generally meets therequirement of advanced process of less than 0.1 um feature size, thereis need to further improve the Co salicide process, and to ensure thatit will be useable even below such feature size. There is a substantialneed in the industry to have an extremely small feature size/line widthCo silicide process that achieves such scaled down thicknesses yet hasgood thermal stability to withstand anneal temperature near 800 to 900degrees centigrade without agglomeration. Furthermore, there is a needto be able to control the process with a better process margin,especially as pertains to the thickness and the sheet resistance of theCo silicide film. Finally, there is an additional pressing need for abasic process flow and process tool for forming Co salicide thatachieves a higher productivity in conventional semiconductormanufacturing.

SUMMARY OF THE INVENTION

A primary object of the present invention therefore is to provide asolution to many of the aforementioned problems associated with themanufacturing of cobalt silicide.

A related object is to provide a high performance, easily manufacturablecontact material suitable for a variety of semiconductor applications,including in self-aligned silicide (SALICIDE) applications;

Another object of the present invention is to provide an improvedintegrated deposition system that is capable of depositing and treatingvarious semiconductor layers, including high performance silicides suchas cobalt silicide;

Yet another object of the present invention is to provide costeffective, reliable Co silicide processes suitable for massimplementation of next generation IC technologies in conventionalsemiconductor fabrication facilities.

A first aspect of the invention therefore concerns a method of formingsilicide materials on a silicon based substrate in which a combinationof Co an Co—Ti is used. This includes generally the steps of: depositinga first metal layer on the silicon based substrate, the first metallayer including Cobalt (Co); and depositing a second metal layer on atleast selected portions of the first metal layer, the second metal layerincluding an alloy of Cobalt and a refractory metal; and performing afirst heat treatment so as to convert at least part of the first metallayer and the silicon based substrate into a first silicide compositionhaving one or more cobalt silicide phases, the one or more cobaltsilicide phases being characterized by a first resistitivity; andperforming a second heat treatment so as to convert the firstcomposition, including the one or more cobalt silicide phases, into asecond silicide composition containing primarily a lower resistivitycobalt silicide phase, the lower resistivity cobalt silicide phasehaving a resistivity substantially less than the first resistivity.

In a preferred approach for this aspect of the invention, the alloy is acomposition including 20 to 80 percent atomic Titanium. In addition, afurter step of removing any non-silicides after step (c) is alsoperformed in most instances. Further in a preferred approach, anadditional step of: cleaning the silicon substrate so as tosubstantially remove any non-native oxides is done prior to step (a). Inaddition, the alloy is preferably a ternary composition of Cobalt,Titanium, and one additional refractory metal and/or carbon.

Further in a preferred approach of this aspect of the invention, steps(a) through (c) are performed in a single semiconductor wafer processingcluster tool, and without exposing a wafer to ambient between suchsteps. This further increases reliability, productivity and throughput.

Another aspect of the invention concerns forming Co based silicidematerials on a silicon based substrate within a cluster tool andcomprising the steps of: depositing a first metal layer on at leastselected portions of the silicon based substrate within a firstprocessing chamber of a semiconductor process cluster tool, the firstmetal layer including an alloy of Cobalt and a refractory metal(preferably Ti). The alloy includes a percentage of refractory metal inthe range of 1 to approximately 10 percent. A first heat treatment isperformed within the semiconductor process cluster tool so as to convertat least part of the first metal layer and the silicon based substrateinto a first silicide composition having one or more cobalt silicidephases, the one or more cobalt silicide phases being characterized by afirst resistitivity. After this, a purge treatment within thesemiconductor process cluster tool is performed using a noble gas so asto remove contaminants and reactive gasses at least prior to steps (a)and/or (b). Then, a second heat treatment converts the firstcomposition, including the one or more cobalt silicide phases, into asecond silicide composition containing primarily a lower resistivitycobalt silicide phase, the lower resistivity cobalt silicide phasehaving a resistivity substantially less than the first resistivity.

In a preferred approach, the first heat treatment is performed as anin-situ anneal while the first metal layer is being deposited. Because asmall amount of titanium is used in the target the resulting silicidecontains trace amounts of the same.

A related aspect of the invention pertains to a method of formingsilicide materials in which both sputtering and heat processingoperations are performed, to effectuate a type of high temperaturesputtering of an alloy layer containing an alloy of Cobalt (Co) and asecond refractory metal onto a silicon based substrate. The Co ispresent in the alloy layer in an amount sufficient for forming a lowresistivity salicide contact with the silicon based substrate. While thesputtering is taking place, the silicon based substrate is heatedin-situ (by a heating lamp) at a temperature and time sufficient tocause at least partial salicidation of the silicon based substrate andthe alloy layer. The final salicidation is achieved during a subsequentheating step, which is at a higher temperature, and which can also beperformed in-situ at the same processing station of a cluster chamber.

Yet another aspect of the invention is directed to a method of formingsilicide materials on a silicon based substrate using two differentlayers of cobalt. This process generally include the following steps:(a) depositing a first metal layer on the silicon based substrate, thefirst metal layer including including an alloy of Cobalt and arefractory metal; and (b) depositing a second metal layer on the siliconbased substrate, the second metal layer including a concentration ofCobalt exceeding that of the first metal layer; and (c) performing afirst heat treatment substantially contemporaneously with step (b) so asto convert at least part of the first metal layer, the second metallayer and the silicon based substrate into a first silicide compositionhaving one or mote cobalt silicide phases, the one or more cobaltsilicide phases being characterized by a first resistitivity; and (d)performing a second heat treatment so as to convert the firstcomposition, including the one or more cobalt silicide phases, into asecond silicide composition containing primarily a lower resistivitycobalt silicide phase, the lower resistivity cobalt silicide phasehaving a resistivity substantially less than: the first resistivity.

In a preferred approach, the alloy includes about 20 to 80 atomicpercent of Ti, and the second metal layer includes a second alloy ofCobalt and a refractory metal. As before, steps (a), (b) and (c)preferably occur within a single semiconductor wafer processing clustertool.

Yet another aspect of the invention concerns a method of operating acluster tool to effectuate the aforementioned Co silicide processes andreactions. One representative example uses the following steps: (a)cleaning the silicon based wafer to remove any native oxides and/orcontaminants; and (b) out-gassing the silicon based wafer. At thispoint, the silicon based wafer is substantially water-mark free.Thereafter in step (c) a first metal layer is sputtered on the siliconbased wafer using an alloy target comprising cobalt (Co) and at leastone refractory metal. Then a step (d) annealing the silicon based waferin a first anneal treatment to cause the cobalt to react with siliconlocated on the silicon based wafer is performed. To enhance reliabiltityand productivity, steps (b) through (e) are performed in a singlesemiconductor wafer processing cluster tool.

Since many cluster tools do not include wet etching, such steps areperformed on the silicon based wafer at a processing station separatefrom the single semiconductor wafer processing cluster tool to removemetals other than silicides. Furthermore, the outgassing step can alsooccur in a loadlock chamber of the single semiconductor wafer processingcluster tool.

Still another aspect of the invention is directed to a cluster tool forperforming semiconductor processing operations on a wafer. The clustertool is adapted to have: (a) a load lock chamber for receiving thewafer; and (b) a sputter chamber equipped with a cobalt alloy target forsputtering a target material on the wafer; and (c) a heat annealingapparatus for heating the wafer at a rate and temperature sufficient tocause a silicide reaction between the sputtered target material and thewafer.

The load lock chamber is preferably used for outgassing of the wafer.The sputter chamber and the heat annealing apparatus are preferablyintegrated in a single processing station to effectuate an in-situ, hightemperature sputtering operation. A second sputter chamber is alsoequipped with a second target including cobalt for sputtering a secondtarget material on the wafer. Furthermore, a cleaning station is adaptedfor performing a cleaning operation on the wafer prior to any sputteroperation. Finally, in another variation, a target for the sputterchamber is adjustable in situ so that two different target materials canbe deposited on the wafer without changing locations.

Other aspects of the present invention are directed to structures,compositions and semiconductor devices that are formed as a result ofthe aforementioned Co silicide reactions and processes, and using thecluster tools as described.

These and other aspects of the invention are now described in detailwith reference to the attached drawings and other supporting materialsprovided herein.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 to 6 are cross sectional views generally illustrating an overallmanufacturing method for making a layer of cobalt silicide, and asemiconductor device employing the same in accordance with a firstembodiment of the present invention;

FIGS. 7 to 9 are cross sectional views generally illustrating an overallmanufacturing method for making a layer of cobalt silicide, and asemiconductor device employing the same in accordance with a secondembodiment of the present invention;

FIGS. 10 to 13 are cross sectional views generally illustrating anoverall manufacturing method for making a layer of cobalt silicide, anda semiconductor device employing the same in accordance with a thirdembodiment of the present invention;

FIG. 14 depicts a cross section of a prior art scheme for forming cobaltsilicide, including intermediate reactions results generated by ananneal step;

FIG. 15 depicts some of the intermediate reactions results generated bya cobalt silicide process of the present invention during an annealstep;

FIG. 16 generally illustrates a preferred embodiment of adeposition/reaction system configured in accordance with the teachingsof the present invention for depositing and forming silicide materials.

DETAILED DESCRIPTION OF THE INVENTION

The following detailed description is meant to be illustrative only ofparticular embodiments of the invention. Other embodiments of theinvention and variations of those disclosed will be obvious to thoseskilled in the art in view of the following description.

First Embodiment

A preferred method employed by a first embodiment of the invention isdepicted collectively in FIGS. 1 to 6. In FIG. 1, a cross-section of asemiconductor wafer 100 shows a conventional semiconductor device 105formed in a lightly doped (n or p type) substrate 101, and which devicetypically has a doped (n or p type) polysilicon based gate electrode110, a gate insulating him 115, dielectric (SiN) sidewall spacers 120,121, shallow doped (n or p type) source/drain regions 130, 131 and deepdoped (also n or p) source/drain regions 135, 136. Device 100 typicallyis also bordered by one or more isolation regions 138, consisting ofvarious insulating films such as SiO2. The materials and manufacturingtechniques used to create such starting structures are well-known in theart, so in the interests of brevity and clarity they are not reproducedhere. While the present invention is preferably used with a polysiliconbased gate electrode 110, and silicon-based source/drain regions 135,136, it will be apparent to those skilled in the art that the presentteachings can be used with any suitable base material that can becontrollably reacted with cobalt.

The exposed silicon surface portions (i.e., gate electrode 110,source/drain regions 135, 136) typically comprise both n type and p typedoped regions for both polysilicon and substrate areas across wafer 100.The silicon substrate areas 135. 136 and polysilicon gate 110 aregenerally doped by P, As, B and Ge ion implanted impurities, and areusually covered with a thin native oxide (not shown) as noted earlier.This native oxide must be removed prior to the silicidation process toensure proper contact formation.

To do this, wafer 100 is processed using any number of conventionaltechniques known in the art for removing or reducing native oxide on asilicon surface. In a preferred method, wafer 100 is processed with a HFdip preferably using deoxygenated water. Isopropyl alcohol drying of thewafer prevents water marks. HF dip and Isopropyl alcohol drying can beperformed in a batch process as well as a single wafer process. Anotherapproach is to use a HF vapor treatment to remove the native oxide.Another approach is to physically sputter wafer 100 to remove any nativeoxide. These latter two approaches are easily integrated in a clustertool system, so that the oxide-removal treatment can be performed in onechamber and wafer 100 is then transferred to another chamber for metalsputter without being exposed to air in between steps.

In some applications an out-gassing step may also be included. Thus, anoverall typical process for native oxide reduction includes thefollowing sequence of steps: a HF dip, IPA drying and an out-gassingstep. While out-gassing is usually performed in a reaction chamber, insome applications it can be performed in a load lock location as well.

In any event, the cross section in FIG. 1 depicts wafer 100 after suchnative oxide reduction steps. Next, as shown in FIG. 2, wafer 100 isplaced in a first sputter deposition chamber where a Cobalt (Co) layer140 of about 10 nm is deposited over the entire wafer using asubstantially pure cobalt target in a noble gas plasma environment. In apreferred approach, the first sputter deposition chamber is part of acluster tool described in more detail with reference to FIG. 16 below.

As seen in FIG. 3, the wafer is then moved to a second chamber todeposit a Co—Ti alloy cap layer 150 of about 15 nm using a Co—Ti targetalso in a noble gas plasma environment. The Co—Ti target is adapted tohave a Ti content from about 20 to 80 atomic percent, preferably about50 atomic percent. Of course, in some reactors it may be possible tochange targets without removing wafer 100 from the first reactionchamber so that both the Co and Co—Ti cap layer are formed in the samechamber.

While Ti is used in this preferred embodiment, it will be apparent tothose skilled in the art that other elements could be used depending onthe desired film qualities, compatibility with subsequent depositionmaterials, etc., and provided such elements can provide the same degreeof protection from oxygen. For example, any number of refractor metalsmay be suitable for a particular application. Refractory metals such asTa, W, Mo, Zr, Hf, Nb are also known to mediate cobalt silicidation toform high quality cobalt silicide films just as Ti does. In this regard,it should be noted that the term “refractory metal” is not intended tolimit the invention to these metals, and those skilled in the art willappreciate that other metals (positioned near these refractory metals ona periodic table) are also entirely suitable for the present invention.

After the Co—Ti capping, the wafer is transferred to an anneal chamber.This anneal chamber can be integrated to the same cluster tool thatincludes the aforementioned first and second reaction chambers, or itcan be located elsewhere because of the protection afforded by Co—Ti caplayer 150. In those cases where the anneal chamber is not integrated tothe same cluster tool, cap layer 150 is preferably formed as anamorphous layer. This can be achieved using conventional mechanisms bycontrolling the temperature of wafer 100 while depositing cap layer 150.As a further refinement, a ternary target with a small addition of asecond refractory metal or a light element such as carbon can also beused to improve the quality of cap layer 150.

As shown in FIG. 4, a first anneal is performed for a relatively shortperiod of time (about 60 seconds) and at about 500 to 650 degreecentigrade in a nitrogen or an argon environment, using a conventionalheat lamp apparatus. The actual times and temperatures will vary, ofcourse, from heater to heater and for any particular combination ofmaterials/thicknesses can be easily determined and optimized usingroutine skill. This first anneal operation causes a number of reactions,both within Co—Ti layer 150, Co layer 140, and at interfaces with theunderlying silicon layers. For instance, Co layer 140 and siliconmaterials in the underlying silicon areas (gate electrode 110 andSource/Drain regions 135, 136) react to form certain compounds withinlayer 140, as well as at an interface 160 therebetween, including CoSiand Co2Si which represent high resistivity phase silicides.

In some environments and in certain process windows it is conceivablethat Titanium from Co—Ti layer 150 may be abstracted by nitrogen to thesurface, where it can react to form a Ti/TiN layer (not shown). SinceCoTi silicidation is a competing reaction against such abstraction,however, this additional type of layer is not expected to be asignificant factor in embodiments of the present invention.

Wafer 100 is then selectively etched as illustrated in FIG. 5 to removemetals and mixtures other than the silicides formed in the prior step.Again, the various chemicals and procedures required for this step arewell-known in the art, and the present invention is by no means limitedin this respect.

As seen in FIG. 6, wafer 100 is then subjected to a second anneal atabout 750 to 900 degrees centigrade (in the same manner as before) andwith a time sufficient to complete the silicidation process, that is, totransform the high resistance Co2Si and/or CoSi phase materials to alower resistance CoSi2 phase material. As before, the optimal actualtimes and temperatures will vary, of course, depending on the specificmaterials, thicknesses, etc. of the deposited layers. This completes theformation of the cobalt silicide layer 170. Thereafter, wafer 100 mayundergo any number of additional well-known processing steps (not shown)to provide interlayer dielectrics, contacts, interconnects, etc., todevice 105, and to complete fabrication of such device.

A cross sectional view of the result of the first anneal treatment isshown in FIG. 15, which can be contrasted with the result of the priorart at a similar stage shown in FIG. 14. As seen in FIG. 5, theintermediate reaction products of the present invention are similar, butthe present invention instead advanteageously initially deposits what isan end-result (Co—Ti) of the prior art process. This means that thepresent process is more predictable, because for a given amount of Co, aprocess engineer can better determine how much intermediate product(CoSi and Co2Si) will be formed.

While the Co—Ti alloy is less reactive to N2 than Ti, it is nonethelessstill sufficiently reactive to oxygen and moisture to prevent anycontamination problems. Thus, it performs well enough to prevent anyperformance issues with the resulting cobalt silicide layer. Moreover,like the Ti cap used in the prior art, the Co—Ti layer 150 of thepresent invention can act as a source for some Ti diffusion into theunderlying Co layer 140. The presence of Ti mediates the silicidationreaction, which raises the temperature required to convert to the lowerresistance CoSi2 phase, but it nonetheless enhances the thermalstability of the resulting cobalt silicide layer 170. At the same time,the Co—Ti cap layer 150 is less reactive than a pure Ti cap on Co; thismeans that there is less interaction between the cap layer andunderlying Co films to adversely affect the amount of Co that isavailable for the silicidation reaction. This fact, in turn, means thatprocess control is improved because the final thickness of the resultingsilicide film is more easily controlled.

Furthermore, the resulting thickness can be very thin as compared to aprior art process, because less Ti has to be involved in the overallprocess. This also increases productivity, reduces cycle time, etc. Inthe present approach, only about 80 to 100 Angstroms of Cobalt arerequired to react with 350 Angstroms of silicon, resulting in anextremely dense combined silicide layer of approximately 330 Angstromsafter final silicidation.

Second Embodiment

A preferred method employed by a second embodiment of the invention isdepicted collectively in FIGS. 7 to 9. Unless otherwise noted, likenumerals for the second embodiment are intended to refer to likestructures as previously discussed in the first embodiment above.

As before with the first embodiment, a wafer 100 having dielectricsurface and silicon surface is prepared. As before, wafer 100 isprocessed using any number of well-known techniques to remove or reducenative oxide.

As shown in FIG. 7, wafer 100 is then moved to a sputter chamber todeposit a Co—Ti layer 150 using a Co—Ti alloy target having a Ti contentabout 1 to 50 atomic percent (and preferably 1 to 10 percent) under annoble gas plasma environment, in this case, preferably argon.

A first anneal is performed at about 500 to 650 degree centigradepreferably in situ as seen in FIG. 8. This can be achieved byintegrating a heating apparatus to the sputter chamber, such as a hotplate or a lamp. Thus, in this approach, an in-situ salicidation isperformed during sputtering, in what can be considered a hightemperature sputtering operation.

Alternatively, the first anneal could be performed in another chamberwithin the cluster tool in a similar manner (i.e., with a hot plate orheating lamp). Since the Si surface is free of oxide, and the ambient isfree of N2, there is less tendency for Ti to migrate to the surface inthis embodiment.

Unlike the first embodiment, no additional first layer of Co isdeposited, because it is not necessary to do so. By carefullycontrolling the amount of Ti in the Co—Ti alloy target, it is possibleto deposit a mixture that: (1) has sufficient Cobalt to reacteffectively with the underlying silicon; (2) and yet also has sufficientTi to prevent contamination to the Cobalt from oxygen and otherreactants.

To minimize this second effect, the cluster tool in this embodiment usesa noble gas such as argon for sputtering and purging any vacuum systemsprior to critical operations such as a deposition operation. The pointof using a noble gas purifier is that it can be used to remove tracereactive gasses such as oxygen, moisture and N2 before sputteringoperations. In other words, it cuts down significantly on the number ofreactive products that can adversely affect the underlying Co, so thatless Ti is actually needed for controlling oxygen and moisturecontamination. For this reason, in this embodiment, a target comprising1-10 atomic percent of Ti can be used preferably.

At the same time, the resulting Co—Ti alloy layer 150 is sufficientlyrich in Cobalt that it can react effectively to silicide later with theunderlying silicon areas. Accordingly, the low percentage Ti alloytarget provides enough Ti for forming a Ti—mediated cobalt silicide filmyet does not consume too much cobalt by forming an Co—Ti intermetallicmixture. The Ti migrates during the various reactions, however, and inthe end resulting silicide film, some residual Ti can be found in thecobalt silicide.

Finally, because the initial layer 150 is not purely Cobalt, it tends toreact less with any initial residual oxide that may be on the surface ofwafer 100, or later contaminants. This means that the overall processyield can be improved, because the operating environment and startingconditions do not need to be quite so strict or rigid.

After the first anneal wafer 100 is removed from the cluster tool andsubjected to selective etch (as before) to remove metals other thansilicide. The wafer is then rinsed, dried and subjected to a secondanneal (as before) to convert the high resistance Co2Si and CoSi phaseto low resistance CoSi2 phase as before, resulting in the structureshown in FIG. 9. This structure is otherwise identical in most respectsto the resulting structure shown in FIG. 6.

The advantage of this second embodiment is the simplicity of the numberof steps, and their sequence, enhances the productivity of the clustertool. The cluster tool (FIG. 16) can process wafer 100 for many stepssuch as native oxide removal, Co—Ti alloy sputtering and the firstanneal without exposing to air. The Co—Ti alloy layer 150 provides aTi—mediated cobalt silicide layer 170 that has good thermal stabilityagainst agglomeration of the CoSi2 film under high temperature. Inaddition, the Co—Ti alloy layer 150 also provides some process marginsuch that neither native oxide removal nor the chamber environments needto be perfect.

Because the above embodiment uses an in-situ salicidation approach (inthe form of high temperature sputtering—in this case, sputtering withlamp heating) it also has great potential to reduce leakage current ofvery shallow source/drain junctions required in next generationtechnologies.

Third Embodiment

A preferred method employed by a third embodiment of the invention isdepicted collectively in FIGS. 10 to 13. Unless otherwise noted, likenumerals for the second embodiment are intended to refer to likestructures as previously discussed in the first embodiment above.

As above, wafer 100 is subjected to any number of procedures to removeor reduce native oxide. Next, as shown in FIG. 10, the wafer is moved toa sputter chamber to deposit a first layer 150 consisting of about 5 to15 nm of a Co—Ti alloy, using a Co—Ti alloy target including about 20 to80 atomic percent of Ti.

Next, in FIG. 11, wafer 100 is then moved to a second sputter chamber(preferably in the same cluster tool) to deposit either a Co layer 151,or a Co—Ti alloy layer 151 having a richer (higher percentage) Cocontent than the first Co—Ti layer 150. Both layers 150, 151 aredeposited under noble gas environment plasma. In the second depositionwafer 100 is heated to about 500 to 650 degree centigrade, that is, anin situ anneal is performed within the sputtering chamber. The firstCo—Ti alloy target is preferred to have a Ti content near or higher than50 atomic percent so as to reduce an effective amount of Co available toform a silicide when heated in the second chamber. The second sputteringoperation supplies additional Co to the wafer surface allowing Co2Si orCoSi to be formed during the process since heat is also provided. Inthis way, the final thickness of layers 150, 151 is easier to control.

As before, wafer 100 is treated with a selective etch to remove metalsother than silicide. The wafer is then rinsed, dried and annealed forthe second time as shown in FIG. 12 to convert the Co2Si and CoSi phasematerials to the lower resistance CoSi2 phase. The resulting layer 170of FIG. 13 is substantially the same as that shown already in FIGS. 6and 9.

Cluster Tool Embodiment

An improved semiconductor processing system 1000 is depicted generallyin FIG. 16, which is based generally on a conventional cluster toolsystem such as the Endura® HP PVD System sold by Applied Materials. Asseen generally in this figure, system 1000 includes a set of loadlockchambers 1010 and 1020 for receiving/pre-processing incoming wafersand/or outputting finished wafers. For example, outgassing operationscan typically be performed in such loadlock chambers. A variety ofprocessing chambers 1030-1080, and wafer handling stations 1100 and 1200are also part of the system. To accommodate the processes of the presentinvention, system 1000 includes one or more modified sputter chambers1040, in which a Co—Ti target is used (in lieu of a conventionalsputtering target) or a combination of separate stations using both aCo-based target and a Co—Ti alloy target are used for depositingseparate Co and Co—Ti layers.

The Endura® system also already includes a precleaning station, whereone or more of the aforementioned wafer cleaning operations can beperformed. In addition, one or more sputter chambers 1050 (or 1060 or1070) also include some form of heating assembly, so that heatingoperations, including in-situ anneals, can be performed directly onwafers 100 without having to remove the wafers from the cluster tool.When sputter chamber 1040 (with an alloy target) includes an integratedheating lamp, for example, a high temperature sputtering operation notedearlier can be conveniently performed for in-situ salicidation. Waferhandling stations 1100 and 1200 ensure that the wafers move smoothlyfrom station to station without breaking vacuum, and so as to avoidcontamination.

While this invention has been described with reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. It will be clearly understood by those skilled in theart that foregoing description is merely by way of example and is not alimitation on the scope of the invention, which may be utilized in manytypes of integrated circuits made with conventional processingtechnologies. Various modifications and combinations of the illustrativeembodiments, as well as other embodiments of the invention, will beapparent to persons skilled in the art upon reference to thedescription. Such modifications and combinations, of course, may useother features that are already known in lieu of or in addition to whatis disclosed herein. It is therefore intended that the appended claimsencompass any such modifications or embodiments. While such claims havebeen formulated based on the particular embodiments described herein, itshould be apparent the scope of the disclosure herein also applies toany novel and non-obvious feature (or combination thereof) disclosedexplicitly or implicitly to one of skill in the art, regardless ofwhether such relates to the claims as provided below, and whether or notit solves and/or mitigates all of the same technical problems describedabove. Finally, the applicants further reserve the right to pursue newand/or additional claims directed to any such novel and non-obviousfeatures during the prosecution of the present application (and/or anyrelated applications).

1. A semiconductor device on a silicon based substrate comprising: (a) atransistor which includes at least one source/drain region in thesilicon based substrate; and (b) a first metal layer on the siliconbased substrate in contact with said at least one source/drain region,said first metal layer including Cobalt (Co); and (c) a second metallayer on at least selected portions of the first metal layer includingin said at least one source/drain region, said second metal layerincluding an alloy of Cobalt and a refractory metal; and wherein saidfirst metal layer and said second layer are adapted to form a lowresistivity cobalt silicide contact in said source/drain region.
 2. Thesemiconductor device of claim 1, wherein said alloy is a compositionincluding 20 to 80 percent atomic Titanium. 3-4. (canceled)
 5. Thesemiconductor device of claim 1, wherein said alloy is a ternarycomposition of Cobalt, Titanium, and one additional refractory metaland/or carbon.
 6. The semiconductor device of claim 1, wherein saidfirst metal layer and said second metal layer are formed in a singlechamber of a semiconductor wafer processing cluster tool, and withoutexposing a wafer to ambient between such steps.
 7. A semiconductordevice on a silicon based substrate comprising: (a) a transistor on thesilicon based substrate which includes at least one active region; and(b) a first metal layer on at least selected portions of the siliconbased substrate including on said at least one active region, said firstmetal layer including an alloy of Cobalt and a refractory metal; andwherein said alloy includes a percentage of refractory metal in therange of 1 to approximately 10 percent; further wherein said alloy isadapted to react and form a low resistivity cobalt silicide contact insaid at least one active region.
 8. (canceled)
 9. The semiconductordevice of claim 7, wherein said refractory metal is titanium. 10-14.(canceled)
 15. A semiconductor transistor device on a silicon basedsubstrate comprising: (a) a source/drain region and a gate region forthe semiconductor transistor device; (b) a first metal layer on thesilicon based substrate including on said gate region and on saidsource/drain region, said first metal layer including an alloy of Cobaltand a refractory metal; and (c) a second metal layer on the siliconbased substrate including on said gate region and on said source/drainregion, said second metal layer including a concentration of Cobaltexceeding that of said first metal layer; and wherein said first metallayer and said second layer are adapted to form a low resistivity cobaltsilicide contact in said source/drain region.
 16. The semiconductortransistor device of claim 15, wherein said alloy includes about 20 to80 atomic percent of Ti.
 17. The semiconductor transistor device ofclaim 15, wherein said second metal layer includes a second alloy ofCobalt and a refractory metal.
 18. The semiconductor transistor deviceof claim 15, wherein within a single semiconductor wafer processingcluster tool without exposing the silicon substrate to outside ambient.19-29. (canceled)
 30. A semiconductor device comprising: a field effecttransistor, including at least one source/drain region; and a silicidecontact region connected to said source/drain region; and said silicidecontact region being formed of cobalt-silicide, and further including atrace concentration of a refractory metal.
 31. The device of claim 30,wherein said refractory metal is titanium.
 32. The device of claim 30,wherein said refractory metal trace concentration is less than 1%.